Setyo Purwanto, A. Dimyati, R. Iskandar, Wisnu A.A, Tjipto S



Surface Modification of Chemical Vapor Deposition (CVD) Diamond Film/Si(111)  by Implantation with Fe+B ions In Conjunction with their  Magnetic Properties. Surfcace modification of CVD manufactured diamond films on Si(111) substrate has been performed by means of Fe+B ion implantation followed by Argon ion gas sputtering with acceleration energy 20 keV and ion dose 1x1015  and 1x1016 ions cm-2. Scanning Transmission Electron Microscope (STEM) imaging shows the formation of amorphous carbon layer on top of the diamond film with thickness ca. 100 nm on the implanted sample and ca. 20 nm on the sample without implantion. The morphology and magnetic property of the films surface were characterized by Atomic and Magnetic Force Microscopy (AFM/MFM). The Electron Energy Loss Spectroscopy EELS analysis has revealed amount of Boron atoms distributed homogenously inside the carbon amorphous layer on both samples which is in close agreement to the result of Raman Spectroscopy showing the changes of the Raman spectrum due to implantation. The magnetic properties of the samples after Fe+B ion implantion were additionally investigated by means of Vibrating Sample Magnetometer (VSM). By increasing ion doses at constant energy 20 keV, the magnetoresistance property decreased from +45% on the sample implanted with dose 1x1015 to +8% on the sample implanted with dose 1x1016 ions cm-2.


Kata Kunci

CVD Diamond film, ion implantation, magnetoresistance, nanostructure

Teks Lengkap:




[1] S. Talapatra, J.Y. Cheng, N. Chakrapani, S. Trasobares, A. Cao, R. Vajtai, M.B. Huang, P.M. Ajayan. ”Ion irradiation induced structural modifications in diamond particles“, Nanotechnology,vol.17, pp.305-309, 2006.

[2] Balasubramanian, G., Chan, I. Y., Kolesov, R., Al-Hmoud, M.,Tisler, J., Shin, C., Kim, C., Wojcik, A., Hemmer, P. R., Krueger,A.,et al. “Nanoscale Imaging Magnetometry with Diamond Spins under Ambient Conditions”, Nature,vol.455, pp. 648–651, 2008.

[3] J.F. Ziegler :

[4] C. Tavares, F. Omnes, J. Pernot, E. Bustarret .” Electronic properties of boron-doped {111}-oriented homoepitaxial diamond layer”, Diamond and Related Materials, vol.15, pp. 582-585, 2006.

[5] R. Höhne, P. Esquinazi, V. Heera, H. Weishart . “Magnetic properties of ion-implanted diamond”, Diamond & Related Materials, vol. 16, pp. 1589–1596, 2007.

[6] J.Y. Fei, D. Yang, X. Wang, Q.B. Meng, Xuejin Wang, Y.Y. Xiong, Y.X. Nie, Ke-an Feng.” Magnetoresistance of Boron Doped CVD polycrystalline films”, Diamond and Related Materials, vol.11, no.1, pp. 49-52, 2002.

[7] J. Mayer, H.-J. Penkalla, A. Dimyati, M. Dani, P. Untoro, D. Naumenko, and W.J. Quadakkers.” Time dependence of Mg-incorporation in alumina scales on FeCrAl alloys studied by FIB - prepared TEM cross sections”, Mater. at High Temp, vol.20, pp. 167-173, 2003.

[8] P.W. May, J.A. Smith, K.N. Rosser .” 785 nm Raman spectroscopy of CVD diamond film”, Diamond & Related Materials, vol.17, pp. 199–203, 2008.

[9] P.W. Way, W.J. Ludlow, M. Hannaway, P.J. Heard, J.A. Smith, K.N. Rosser,” Raman and conductivity studies Boron-doped microcrystalline diamond, facetted nanocrystalline diamond and cauliflower diamond films”, Diamond & Related Materials, vol.17, pp. 105–117, 2008.

[10] X.J. Hu, J.S. Ye, H.J. Liu, H. Hu, X.H. Chen,”The influence of oxygen ion implantation on the structural and electrical properties of B-doped diamond films”, Diamond and Related Materials, vol.20, pp. 246-249, 2011.

[11] Kevin E. Bennet, Kendall H. Lee, James N. Kruchowski, Su-Youne Chang , Michael P. Marsh.

[12] Alexander A. Van Orsow, Aurelio Paez and Felicia S. Manciu.” Development of Conductive Boron-Doped Diamond Electrode: A microscopic, Spectroscopic, and Voltammetric Study” , Materials, vol.6, pp. 5726-5741, 2013.

[13] B.L. Willems, G. Zhang, J. Vanacken, V.V. Moshchalkov, S.D. Janssens, O.A. Williams, K. Haenen, P. , Wagner,”Negative magnetoresistance in boron doped nanocrystalline diamond films”, J. of Appl. Phys. vol.106, p. 033711, 2009.


  • Saat ini tidak ada refbacks.