DEVELOPMENT OF TiCoO2 SEMICONDUCTOR FILM

M. N. Indro; A. Kartono; M. Kurniati; B. Safitri

doi:10.17146/jsmi.2006.7.3.4838

DEVELOPMENT OF TiCoO2 SEMICONDUCTOR FILM

M. N. Indro⁽¹⁾, A. Kartono⁽²⁾, M. Kurniati⁽³⁾, B. Safitri⁽⁴⁾,

(1) Department of Physics, Institute of Agriculture Bogor Kampus IPB Darmaga, Bogor
(2) Department of Physics, Institute of Agriculture Bogor Kampus IPB Darmaga, Bogor
(3) Department of Physics, Institute of Agriculture Bogor Kampus IPB Darmaga, Bogor
(4) Department of Physics, Institute of Agriculture Bogor Kampus IPB Darmaga, Bogor

Corresponding Author

Abstract

DEVELOPMENT OF TiCoO₂ SEMICONDUCTOR FILM. Good quality of TiO₂ and TiCoO₂ films may be developed using Metal Organic Chemical Vapor Deposition (MOCVD) technique at the temperature around 450 ^oC on silicon substrate. The X-Rays Diffractometer (XRD) investigation on their crystals structure has shown that the samples resulted through this technique are almost as homogenously single crystals. Observation using Scanning Electron Microscope (SEM) technique on their surfaces has shown that the films have a constant thickness around 0.7mm and smooth surfaces. Further investigation on their magnetic behavior results in magnetic hysteresis at the coercive field around 80-150 Oe, with the largest remanent magnetization about 150-250 emu/cm³.