., Usman Sudjadi, Pusat Teknologi Bahan Bakar Nuklir (PTBBN), BATAN Kawasan Puspiptek-Tangerang Selatan 15314, Banten, Indonesia

• Vol 15, No 1 (2009): Januari 2009 - Artikel
  INVESTIGATION OF ANNEALING EFFECT ON THE FORWARD BIAS AND LEAKAGE CURRENT CHANGES OF P-TYPE 6H-SIC SCHOTTKY DIODES WITH SIO2 RAMP PROFILE AFTER IRRADIATED UP TO 1.75 MGY (Application For Nuclear Fuel Elements Facilities)
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