Growth of ZnS:Ag:Cu Thin Film Deposited on Glass Substrates using Thermal Evaporation Technique for Alpha-photovoltaic

Emy Mulyani(1), Tjipto Sujitno(2), Dessy Purbandari(3), Ferdiansjah Ferdiansjah(4), Sayono Sayono(5),


(1) Centre for Accelerator Science and Technology - National Nuclear Energy Agency Jl. Babarsari Kotak Pos 6101, Yogyakarta, Indonesia
(2) Centre for Accelerator Science and Technology - National Nuclear Energy Agency Jl. Babarsari Kotak Pos 6101, Yogyakarta, Indonesia
(3) Department of Nuclear Engineering, Faculty of Engineering - Gadjah Mada University Bulaksumur, Yogyakarta 55281
(4) Department of Nuclear Engineering, Faculty of Engineering - Gadjah Mada University Bulaksumur, Yogyakarta 55281
(5) Centre for Accelerator Science and Technology - National Nuclear Energy Agency Jl. Babarsari Kotak Pos 6101, Yogyakarta, Indonesia
Corresponding Author

Abstract


This paper presents the research on the growth of ZnS:Ag:Cu thin film on a glass substrate as a radio-luminescent material. The SRIM/TRIM software is used to determine the optimum thickness based on an energy deposition depth of 5.485 MeV Am 241 alpha radiation source on ZnS:Ag:Cu material. To increase the adhesive strength of the coating, initially, the glass substrate is etched using a plasma glow discharged at 280°C for 15 minutes. Multiple coatings of ZnS:Ag:Cu were  etched on the glass substrate; this was carried out using a thermal evaporation technique to achieve the optimal thickness (based on SRIM/TRIM simulation). The thin film thickness was observed using a scanning electron microscope (SEM). The optical properties of the un-etched, etched glass substrate and thin-film were characterized using UV-Vis spectrometer. Based on SRIM/TRIM simulation, the optimal thickness is 22 mm which can be achieved by coating three times. From optical properties of ZnS:Ag:Cu thin film and after being analysed using Taue plot method, it is found that the energy gap of ZnS:Ag:Cu thin film is 2.48 eV. It can be concluded that the addition of Ag and Cu doped decrease the energy gap of ZnS (3.66 eV).


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DOI: 10.17146/jsmi.2019.21.1.5656

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